• Responsibilities include:

High Speed Digital Circuit Design and / or RTL design

• In this position the individual will be responsible for designing, developing, modifying and evaluating Custom design  circuit structures for interfacing with high performance NAND flash, including new, most advanced 3-dimensional NAND memories.
• Evaluate and implement new modes related to device, design or testing of various NAND operations
• Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues
• Verify designs through timing, power & reliability simulations, and interact with layout and other functional groups for implementation, full chip integration and silicon validation.

• B.E./B.Tech/M.E/M.S/M.Tech in electronics branches
• Aggregate of 75% & Above in all qualifying exams
•  8+ years of relevant Industry Experience

·       CMOS transistor level design, simulation, layout knowledge.

·       Have good understanding of Solid-State device physics.

·       Comfortable with IC tools such as Cadence analog design environment, HSPICE/FINESIM, UNIX

-       Ability to troubleshoot and analyze complex problems.

·       Communicate effectively with Off-site counterparts and sync up the teams of either sides.